Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
نویسندگان
چکیده
منابع مشابه
The effect of doping Graphene Quantum Dots with K, B, N, and Cl on its emitted spectrum
In this work, the effect of doping Graphene Quantum Dots (GQDs) on their emission spectra has been studied. First, graphene has been deposited on SiC substrate by using sublimation method. Second, doped-GQDs have been distributed on the surface of graphene via drop casting. The structure of the samples have been studied and characterized by X-ray diffraction (XRD), Scanning Electron Microscopy ...
متن کاملGiant quantum Hall plateaus generated by charge transfer in epitaxial graphene
Epitaxial graphene has proven itself to be the best candidate for quantum electrical resistance standards due to its wide quantum Hall plateaus with exceptionally high breakdown currents. However one key underlying mechanism, a magnetic field dependent charge transfer process, is yet to be fully understood. Here we report measurements of the quantum Hall effect in epitaxial graphene showing the...
متن کاملEpitaxial graphene
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry’s phase, weak anti-localization and square root fiel...
متن کاملObservation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
Epitaxial graphene films examined were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on the epitaxial graphene was realized by inserting a fully oxidized nanometer thin aluminum film as a seeding layer, followed by an atomic-layer deposition process. The electrical properties of epitaxial graphene films are retained aft...
متن کاملNonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2013